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Bienvenue dans la collection HAL du groupe CS : Convertisseurs Statiques
Nos activités de recherche couvrent les problématiques principales de la conversion d’énergie électrique et reposent sur la combinaison d’approches théoriques et expérimentales autour de la notion de cellule de commutation.
Le groupe s’est spécialisé dans l’étude de nouvelles structures de convertisseurs multicellulaires de moyenne et de forte puissance (du kW au MW) mettant en jeu des agencements originaux des cellules de commutation imbriquées séries, superposées parallèles et la parallélisation globale ou partielle par des dispositifs innovants de couplages magnétiques.
Types de documents publiés
Sujets
Insulated gate bipolar transistors
Skin effect
Self-switching
Railways
Fuel cell
Switching frequency
Thyristor
Traction
Intercell transformers
3D finite elements method
Power conversion
Railway electrification
Elemental semiconductors
Electronique de puissance
Rail transportation
Driver circuits
Device simulation
Multilevel converter
Silicon compounds
Silicon
Coupled inductors
Power Converters
Static converter
CMOS
DC-DC power convertors
GaN
Buck converter
Renewable energy
Short-circuit
MOSFET SiC
SiC MOSFET
Silicon Carbide SiC
Hydrogen
Gate-Damage
Optimization
Power convertors
Switching losses
Detection
Gate Driver
Power integration
Capacitors
Rail transportation power systems
DC-DC power converters
Decentralized control
Dielectric Barrier Discharge
Electric Discharge Power Supply
Power electronics
2D physical simulation
Modelling
Monolithic integration
MOSFET
SiC Mosfet
Photovoltaic hybrid system
Harmonic interactions
DBD
Choppers circuits
Substations
Traction power supplies
Voltage control
Reliability
Switches
Ultra Violet Generation UV
Power Converter Design
Power MOSFET
Active Gate Driver
Multilevel converters
InterCell Transformer ICT
Excimer Lamp
Wide band gap semiconductors
MOSFET circuits
Gate driver
Fault tolerance
Optimisation
IGBT
Design
Bridge circuits
Busbars
Inverter
Distributed control
Medium voltage
Fuel cells
Diamond
SiC MOSFETs
Short-Circuit
HEMT GaN
Gate-Aging
Switching convertors
Wide bandgap semiconductors
Power converter
AC-DC multilevel converter
Silicon carbide
Zero voltage switching
Efficiency
Court-circuit
Gate-Driver
Electrolyzer
Robustness
Interleaved converters
Aerospace
Failure-Mode
Derniers dépôts
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Mathis Picot-Digoix, T-L Le, S. Azzopardi, Sébastien Vinnac, Frédéric Richardeau, et al.. On-Line Digital Fine Monitoring of SiC MOSFET Gate-Oxide Health: A Dual-Channel Gate Driving Approach. 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2024, Bremen, Germany. pp.84-87, ⟨10.1109/ISPSD59661.2024.10579698⟩. ⟨hal-04647322v2⟩
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Anas El Boubkari, Nicolas Rouger, Frédéric Richardeau, Pierre Calmes, Matthew Bacchi, et al.. CMOS Gate Driver with Integrated Gate Current Monitoring Method for Fault Under Load Short Circuit Detection of SiC Power Modules. 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2024, Bremen, Germany. pp.454-457, ⟨10.1109/ISPSD59661.2024.10579581⟩. ⟨hal-04647315⟩
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Mustafa Shqair, Emmanuel Sarraute, Thibauld Cazimajou, Frédéric Richardeau. Transient Thermal 2D FEM Analysis of SiC MOSFET in Short-Circuit Operation Including High-temperature Material Laws and Phase Transition of Aluminum Source Electrode. Microelectronics Reliability, 2024, 159, pp.115440. ⟨10.1016/j.microrel.2024.115440⟩. ⟨hal-04613010⟩
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Matthieu Masson, Marc Cousineau, Nicolas C. Rouger, Frédéric Richardeau, Pierre Calmes, et al.. Système de gestion optimale du temps-mort intégré au gate-driver CMOS grâce à la mesure du courant de grille pour les MOSFETs SiC. Congrès de l'école doctorale GEETS, Ecole Doctorale GEETS, Jun 2024, TOULOUSE (FRANCE), France. ⟨hal-04606906v2⟩