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Conference Papers Year : 2008

Central Frequency Tuning Considerations for Gm-C Resonators in GaAs Technology

Emilie Avignon

Abstract

The ability of adjustment of the central frequency of a Gm-C resonator in GaAs technology is discussed. First, it is shown that whatever the technology the wanted quality factor can be reached through an appropriate sizing of the transconductance values, with adding an external feedback capacitor in the transconductance amplifiers. Then, it is demonstrated that the adjustment of the central frequency must be made preferentially by a specifical transconductance. Finally, because in GaAs technologies varying the transconductance values leads to current offsets which could damage the performances, the maximal allowed current offsets are determined. To illustrate these considerations, simulation at transistor level of a proposed structure in GaAs P-HEMT 0.2 ¹m with integrated feedback capacitors is presented and demonstrates a tunable central frequency from 750 to 810 MHz.

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Electronics
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Dates and versions

hal-00280535 , version 1 (19-05-2008)

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Emilie Avignon, Sylvie Guessab, Richard Kielbasa. Central Frequency Tuning Considerations for Gm-C Resonators in GaAs Technology. IEEE-MWSCAS Midwest Symposium on Circuits and Systems, Aug 2008, Knoxville, United States. pp.558-561, ⟨10.1109/MWSCAS.2008.4616860⟩. ⟨hal-00280535⟩
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