Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates - CentraleSupélec Access content directly
Journal Articles Journal of Non-Crystalline Solids Year : 2006

Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates

P. Bulkin
  • Function : Author
D. Daineka
  • Function : Author
T.H. Dao
  • Function : Author
Pere Roca I Cabarrocas
P. Descamps
  • Function : Author
T. Kervyn de Meerenedre
  • Function : Author
P. Loempoel
  • Function : Author
M. Meaudre
  • Function : Author
R. Meaudre
  • Function : Author
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Dates and versions

hal-00321731 , version 1 (15-09-2008)

Identifiers

  • HAL Id : hal-00321731 , version 1

Cite

Marie-Estelle Gueunier-Farret, Cyril Bazin, Jean-Paul Kleider, Christophe Longeaud, P. Bulkin, et al.. Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates. Journal of Non-Crystalline Solids, 2006, 352, pp.1913-1916. ⟨hal-00321731⟩
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