Electrical properties of V2O5 thin films obtained by Atomic Layer Deposition (ALD) - CentraleSupélec Access content directly
Journal Articles Journal of Materials Chemistry Year : 2004
No file

Dates and versions

hal-00352361 , version 1 (12-01-2009)

Identifiers

  • HAL Id : hal-00352361 , version 1

Cite

Jean-Claude Badot, A. Mantoux, Noël Baffier, Olivier Dubrunfaut, Daniel Lincot. Electrical properties of V2O5 thin films obtained by Atomic Layer Deposition (ALD). Journal of Materials Chemistry, 2004, 14, pp.3411-3415. ⟨hal-00352361⟩
104 View
0 Download

Share

Gmail Facebook X LinkedIn More