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Journal Articles Nanoscale Research Letters Year : 2011

Conductive-probe atomic force microscopy characterization of silicon nanowires

Abstract

The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

Dates and versions

hal-00710727 , version 1 (21-06-2012)

Identifiers

Cite

José Alvarez, Irène Ngo, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Linwei Yu, et al.. Conductive-probe atomic force microscopy characterization of silicon nanowires. Nanoscale Research Letters, 2011, 6, pp.110. ⟨10.1186/1556-276X-6-110⟩. ⟨hal-00710727⟩
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