Schottky photodiode using submicron thick diamond epilayer for flame sensing - CentraleSupélec Access content directly
Journal Articles Nano-micro Letters Year : 2009

Schottky photodiode using submicron thick diamond epilayer for flame sensing

Y. Koide
  • Function : Author
M. Liao
  • Function : Author
José Alvarez
M. Imura
  • Function : Author
K. Sueishi
  • Function : Author
F. Yoshifusa
  • Function : Author

Abstract

The sensing of a flame can be performed by using wide-bandgap semiconductors, which offer a high signal-to-noise ratio since they only response the ultraviolet emission in the flame. Diamond is a robust semiconductor with a wide-bandgap of 5.5 eV, exhibiting an intrinsic solar-blindness for deep-ultraviolet (DUV) detection. In this work, by using a submicron thick boron-doped diamond epilayer grown on a type-Ib diamond substrate, a Schottky photodiode device structure- based flame sensor is demonstrated. The photodiode exhibits extremely low dark current in both forward and reverse modes due to the holes depletion in the epilayer. The photodiode has a photoconductivity gain larger than 100 and a threshold wavelength of 330 nm in the forward bias mode. CO and OH emission bands with wavelengths shorter than 330 nm in a flame light are detected at a forward voltage of -10 V. An alcohol lamp flame in the distance of 250 mm is directly detected without a focusing lens of flame light.

Dates and versions

hal-00763202 , version 1 (10-12-2012)

Identifiers

Cite

Y. Koide, M. Liao, José Alvarez, M. Imura, K. Sueishi, et al.. Schottky photodiode using submicron thick diamond epilayer for flame sensing. Nano-micro Letters, 2009, 1 (1), pp.30-33. ⟨10.5101/nml.v1i1.p30-33⟩. ⟨hal-00763202⟩
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