<?xml version="1.0" encoding="utf-8"?>
<TEI xmlns="http://www.tei-c.org/ns/1.0" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:hal="http://hal.archives-ouvertes.fr/" xmlns:gml="http://www.opengis.net/gml/3.3/" xmlns:gmlce="http://www.opengis.net/gml/3.3/ce" version="1.1" xsi:schemaLocation="http://www.tei-c.org/ns/1.0 http://api.archives-ouvertes.fr/documents/aofr-sword.xsd">
  <teiHeader>
    <fileDesc>
      <titleStmt>
        <title>HAL TEI export of hal-00778962</title>
      </titleStmt>
      <publicationStmt>
        <distributor>CCSD</distributor>
        <availability status="restricted">
          <licence target="https://creativecommons.org/publicdomain/zero/1.0/">CC0 1.0 - Universal</licence>
        </availability>
        <date when="2026-05-24T07:45:37+02:00"/>
      </publicationStmt>
      <sourceDesc>
        <p part="N">HAL API Platform</p>
      </sourceDesc>
    </fileDesc>
  </teiHeader>
  <text>
    <body>
      <listBibl>
        <biblFull>
          <titleStmt>
            <title xml:lang="en">Characterization of thin polycrystalline silicon films deposited on glass by CVD</title>
            <author role="aut">
              <persName>
                <forename type="first">A.G.</forename>
                <surname>Benvenuto</surname>
              </persName>
              <idno type="halauthorid">685938-0</idno>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">R.H.</forename>
                <surname>Buitrago</surname>
              </persName>
              <idno type="halauthorid">685939-0</idno>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Ayana</forename>
                <surname>Badhuri</surname>
              </persName>
              <idno type="halauthorid">524107-0</idno>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Christophe</forename>
                <surname>Longeaud</surname>
              </persName>
              <email type="md5">b96846346dc753e1b8d7b08c2064d9ec</email>
              <email type="domain">geeps.centralesupelec.fr</email>
              <idno type="idhal" notation="string">christophe-longeaud</idno>
              <idno type="idhal" notation="numeric">6409</idno>
              <idno type="halauthorid" notation="string">3982-6409</idno>
              <idno type="IDREF">https://www.idref.fr/076747425</idno>
              <idno type="ORCID">https://orcid.org/0000-0002-7175-3267</idno>
              <idno type="VIAF">https://viaf.org/viaf/216124466</idno>
              <affiliation ref="#struct-1290"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">J. A.</forename>
                <surname>Schmidt</surname>
              </persName>
              <idno type="halauthorid">686443-0</idno>
            </author>
            <editor role="depositor">
              <persName>
                <forename>Olivier</forename>
                <surname>Schneegans</surname>
              </persName>
              <email type="md5">2018d80593ac64b14fc95769ca3b4fb3</email>
              <email type="domain">geeps.centralesupelec.fr</email>
            </editor>
          </titleStmt>
          <editionStmt>
            <edition n="v1" type="current">
              <date type="whenSubmitted">2013-01-21 15:44:19</date>
              <date type="whenModified">2025-08-12 16:57:51</date>
              <date type="whenReleased">2013-01-22 16:31:23</date>
              <date type="whenProduced">2012-12</date>
              <ref type="externalLink" target="https://iopscience.iop.org/article/10.1088/0268-1242/27/12/125013/pdf"/>
            </edition>
            <respStmt>
              <resp>contributor</resp>
              <name key="124062">
                <persName>
                  <forename>Olivier</forename>
                  <surname>Schneegans</surname>
                </persName>
                <email type="md5">2018d80593ac64b14fc95769ca3b4fb3</email>
                <email type="domain">geeps.centralesupelec.fr</email>
              </name>
            </respStmt>
          </editionStmt>
          <publicationStmt>
            <distributor>CCSD</distributor>
            <idno type="halId">hal-00778962</idno>
            <idno type="halUri">https://centralesupelec.hal.science/hal-00778962</idno>
            <idno type="halBibtex">benvenuto:hal-00778962</idno>
            <idno type="halRefHtml">&lt;i&gt;Semiconductor Science and Technology&lt;/i&gt;, 2012, 27 (12), pp.125013. &lt;a target="_blank" href="https://dx.doi.org/10.1088/0268-1242/27/12/125013"&gt;&amp;#x27E8;10.1088/0268-1242/27/12/125013&amp;#x27E9;&lt;/a&gt;</idno>
            <idno type="halRef">Semiconductor Science and Technology, 2012, 27 (12), pp.125013. &amp;#x27E8;10.1088/0268-1242/27/12/125013&amp;#x27E9;</idno>
            <availability status="restricted"/>
          </publicationStmt>
          <seriesStmt>
            <idno type="stamp" n="SUPELEC">SUPELEC</idno>
            <idno type="stamp" n="UPMC" corresp="SORBONNE-UNIVERSITE">Université Pierre et Marie Curie</idno>
            <idno type="stamp" n="EC-PARIS">Ecole Centrale Paris</idno>
            <idno type="stamp" n="CNRS">CNRS - Centre national de la recherche scientifique</idno>
            <idno type="stamp" n="UNIV-PSUD">Université Paris Sud - Paris XI</idno>
            <idno type="stamp" n="SUP_LGEP" corresp="SUPELEC">Laboratoire de génie électrique de Paris</idno>
            <idno type="stamp" n="CENTRALESUPELEC">Ecole CentraleSupélec</idno>
            <idno type="stamp" n="UNIV-PARIS-SACLAY">Université Paris-Saclay</idno>
            <idno type="stamp" n="UNIV-PSUD-SACLAY" corresp="UNIV-PARIS-SACLAY">Université Paris Sud pour Paris Saclay</idno>
            <idno type="stamp" n="SORBONNE-UNIVERSITE">Sorbonne Université</idno>
            <idno type="stamp" n="SU-TI">Sorbonne Université - Texte Intégral</idno>
            <idno type="stamp" n="ALLIANCE-SU"> Alliance Sorbonne Université</idno>
          </seriesStmt>
          <notesStmt>
            <note type="audience" n="2">International</note>
            <note type="popular" n="0">No</note>
            <note type="peer" n="1">Yes</note>
          </notesStmt>
          <sourceDesc>
            <biblStruct>
              <analytic>
                <title xml:lang="en">Characterization of thin polycrystalline silicon films deposited on glass by CVD</title>
                <author role="aut">
                  <persName>
                    <forename type="first">A.G.</forename>
                    <surname>Benvenuto</surname>
                  </persName>
                  <idno type="halauthorid">685938-0</idno>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">R.H.</forename>
                    <surname>Buitrago</surname>
                  </persName>
                  <idno type="halauthorid">685939-0</idno>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Ayana</forename>
                    <surname>Badhuri</surname>
                  </persName>
                  <idno type="halauthorid">524107-0</idno>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Christophe</forename>
                    <surname>Longeaud</surname>
                  </persName>
                  <email type="md5">b96846346dc753e1b8d7b08c2064d9ec</email>
                  <email type="domain">geeps.centralesupelec.fr</email>
                  <idno type="idhal" notation="string">christophe-longeaud</idno>
                  <idno type="idhal" notation="numeric">6409</idno>
                  <idno type="halauthorid" notation="string">3982-6409</idno>
                  <idno type="IDREF">https://www.idref.fr/076747425</idno>
                  <idno type="ORCID">https://orcid.org/0000-0002-7175-3267</idno>
                  <idno type="VIAF">https://viaf.org/viaf/216124466</idno>
                  <affiliation ref="#struct-1290"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">J. A.</forename>
                    <surname>Schmidt</surname>
                  </persName>
                  <idno type="halauthorid">686443-0</idno>
                </author>
              </analytic>
              <monogr>
                <idno type="halJournalId" status="VALID">8451</idno>
                <idno type="issn">0268-1242</idno>
                <idno type="eissn">1361-6641</idno>
                <title level="j">Semiconductor Science and Technology</title>
                <imprint>
                  <publisher>IOP Publishing</publisher>
                  <biblScope unit="volume">27</biblScope>
                  <biblScope unit="issue">12</biblScope>
                  <biblScope unit="pp">125013</biblScope>
                  <date type="datePub">2012-12</date>
                </imprint>
              </monogr>
              <idno type="doi">10.1088/0268-1242/27/12/125013</idno>
            </biblStruct>
          </sourceDesc>
          <profileDesc>
            <langUsage>
              <language ident="en">English</language>
            </langUsage>
            <textClass>
              <classCode scheme="halTypology" n="ART">Journal articles</classCode>
              <classCode scheme="halOldTypology" n="ART">Journal articles</classCode>
              <classCode scheme="halTreeTypology" n="ART">Journal articles</classCode>
            </textClass>
            <abstract xml:lang="en">
              <p>We deposited polycrystalline silicon (poly-Si) thin films on commercial float glass by chemical vapour deposition from trichlorosilane at temperatures between 735 and 870 °C. The structural properties of the films were evaluated by means of scanning electron microscopy, x-ray diffraction, atomic force microscopy, reflectance in the ultraviolet region and Raman spectroscopy. The electrical characterization involved measurements of dark conductivity and photoconductivity as a function of temperature, Hall effect, ambipolar diffusion length from the steady-state photocarrier grating technique and density of defects by means of modulated photoconductivity. By using boron tribromide as a doping agent, degrees of doping ranging from intrinsic to clearly p-doped were obtained. The process, the reactants and the substrate used are of low cost, and proved to be adequate for direct poly-Si deposition, giving films of good structural and electrical properties.</p>
            </abstract>
          </profileDesc>
        </biblFull>
      </listBibl>
    </body>
    <back>
      <listOrg type="structures">
        <org type="laboratory" xml:id="struct-1290" status="OLD">
          <orgName>Laboratoire de génie électrique de Paris</orgName>
          <orgName type="acronym">LGEP</orgName>
          <desc>
            <address>
              <addrLine>11 rue Joliot Curie Plateau de Moulon 91192 GIF SUR YVETTE CEDEX</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">http://www.lgep.supelec.fr</ref>
          </desc>
          <listRelation>
            <relation active="#struct-92966" type="direct"/>
            <relation active="#struct-93591" type="direct"/>
            <relation active="#struct-303397" type="direct"/>
            <relation name="UMR8507" active="#struct-441569" type="direct"/>
          </listRelation>
        </org>
        <org type="institution" xml:id="struct-92966" status="OLD">
          <idno type="ROR">https://ror.org/028rypz17</idno>
          <orgName>Université Paris-Sud - Paris 11</orgName>
          <orgName type="acronym">UP11</orgName>
          <date type="end">2019-12-31</date>
          <desc>
            <address>
              <addrLine>Bâtiment 300 - 91405 Orsay cedex</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">http://www.u-psud.fr/</ref>
          </desc>
        </org>
        <org type="institution" xml:id="struct-93591" status="OLD">
          <idno type="ROR">https://ror.org/02en5vm52</idno>
          <orgName>Université Pierre et Marie Curie - Paris 6</orgName>
          <orgName type="acronym">UPMC</orgName>
          <date type="end">2017-12-31</date>
          <desc>
            <address>
              <addrLine>4 place Jussieu - 75005 Paris</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">http://www.upmc.fr/</ref>
          </desc>
        </org>
        <org type="institution" xml:id="struct-303397" status="VALID">
          <orgName>Ecole Supérieure d'Electricité - SUPELEC (FRANCE)</orgName>
          <desc>
            <address>
              <country key="FR"/>
            </address>
          </desc>
        </org>
        <org type="regroupinstitution" xml:id="struct-441569" status="VALID">
          <idno type="IdRef">02636817X</idno>
          <idno type="ISNI">0000000122597504</idno>
          <idno type="ROR">https://ror.org/02feahw73</idno>
          <orgName>Centre National de la Recherche Scientifique</orgName>
          <orgName type="acronym">CNRS</orgName>
          <date type="start">1939-10-19</date>
          <desc>
            <address>
              <country key="FR"/>
            </address>
            <ref type="url">https://www.cnrs.fr/</ref>
          </desc>
        </org>
      </listOrg>
    </back>
  </text>
</TEI>