RF power influence on structural and electrical properties of µc-Si1-xCx:H - CentraleSupélec Access content directly
Conference Papers Year : 2013

RF power influence on structural and electrical properties of µc-Si1-xCx:H

E.V. Johnson
Pavel Bulkin
P. Chapon
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hal-00931310 , version 1 (15-01-2014)

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  • HAL Id : hal-00931310 , version 1

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Sofia Gaiaschi, Marie-Estelle Gueunier-Farret, Christophe Longeaud, E.V. Johnson, Pavel Bulkin, et al.. RF power influence on structural and electrical properties of µc-Si1-xCx:H. EUPVSEC 2013, Sep 2013, Paris, France. ⟨hal-00931310⟩
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