Electronic Properties of Large Area Nitrogen Doped Trilayer Graphene on 4H-SiC (0001) - CentraleSupélec Access content directly
Conference Papers Year : 2014

Electronic Properties of Large Area Nitrogen Doped Trilayer Graphene on 4H-SiC (0001)

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hal-01104492 , version 1 (16-01-2015)

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  • HAL Id : hal-01104492 , version 1

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Mohamed Boutchich, Hakim Arezki, David Alamarguy, K.I. Ho, Sediri Haikel, et al.. Electronic Properties of Large Area Nitrogen Doped Trilayer Graphene on 4H-SiC (0001). IRAGO 2014, Nov 2014, Tsukuba, Japan. pp.7PM-4. ⟨hal-01104492⟩
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