Micro-photoluminescence investigation of the doping level in single GaAs crystals epitaxially grown on silicon for multijunction solar cells - CentraleSupélec Access content directly
Conference Poster Year : 2017

Micro-photoluminescence investigation of the doping level in single GaAs crystals epitaxially grown on silicon for multijunction solar cells

Laetitia Vincent
Charles Renard
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Dates and versions

hal-01629676 , version 1 (06-11-2017)

Identifiers

  • HAL Id : hal-01629676 , version 1

Cite

Alexandre Jaffré, José Alvarez, Denis Mencaraglia, James Patrick Connolly, Timothée Molière, et al.. Micro-photoluminescence investigation of the doping level in single GaAs crystals epitaxially grown on silicon for multijunction solar cells. European Materials Research Society, May 2017, Strasbourg, France. ⟨hal-01629676⟩
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