%0 Journal Article %T p-Type a-Si:H Doping Using Plasma Immersion Ion Implantation for Silicon Heterojunction Solar Cell Application %+ Département des Technologies Solaires (DTS) %+ Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI) %+ Laboratoire Génie électrique et électronique de Paris (GeePs) %A Carrere, Tristan %A Munoz, Delfina %A Marianne, Coig %A Longeaud, Christophe %A Kleider, Jean-Paul %< avec comité de lecture %@ 2367-198X %J Solar RRL %I Wiley %V 1 %N 2 %8 2017 %D 2017 %R 10.1002/solr.201600007 %Z Physics [physics]Journal articles %X Plasma immersion ion implantation doping of thin a-Si:H layers is proposed as a new and easy-to-process solution for the fabrication of interdigitated back contacted a-Si/c-Si heterojunction solar cells (SHJ). This study is focused on boron implantation (at low acceleration voltages in the range of 500-1500 V) in a-Si:H layers on a c-Si substrate, to create the strongly doped emitter while maintaining very high c-Si surface passivation, required for high efficiency SHJ solar cells. The influence of implantation parameters and post-annealing temperature on the a-Si:H layer conductivity and passivation quality are assessed. The doped layers conductivity is also investigated by direct and indirect electrical characterization of the density of states in a-Si:H after ion implantation, and the post-implantation annealing. Eventually, an interesting passivation/doping trade-off is obtained after annealing at 300 C of samples implanted at 1000 V with implied open circuit voltage values of 710 (AE5) mV and conductivity values of the doped a-Si:H layer of 3.0 (AE1.0) Â 10 À5 V À1 cm À1 , which demonstrates that such approach is promising for processing IBC-SHJ cells. Introduction: The interdigitated back contact amorphous/ crystalline silicon (a-Si:H/c-Si) heterojunction solar cell (IBC-SHJ) is one of the most promising architectures. Indeed, the standard SHJ cell architecture already achieved very high efficiencies (25.1% on large area [1]), and the interdigitated back contact architecture allows to suppress shadowing related to the %G English %2 https://centralesupelec.hal.science/hal-01631626/document %2 https://centralesupelec.hal.science/hal-01631626/file/Carrere_et_al-2017-Solar_RRL.pdf %L hal-01631626 %U https://centralesupelec.hal.science/hal-01631626 %~ CEA %~ UNIV-SAVOIE %~ UPMC %~ UGA %~ CNRS %~ UNIV-PSUD %~ CENTRALESUPELEC %~ GEEPS %~ PHEMADIC %~ DRT %~ UNIV-PARIS-SACLAY %~ UNIV-PSUD-SACLAY %~ CENTRALESUPELEC-SACLAY %~ UPMC_POLE_1 %~ LETI %~ LITEN %~ SORBONNE-UNIVERSITE %~ CEA-GRE %~ SU-SCIENCES %~ TEST-HALCNRS %~ USMB-COMUE %~ SU-TI %~ GS-ENGINEERING %~ GS-PHYSIQUE %~ INSTITUT-SCIENCES-LUMIERE %~ ALLIANCE-SU %~ INES