@inproceedings{mencaraglia:hal-02343896, TITLE = {{Building blocks development for defect-free growth of GaAs on silicon for tandem solar cells}}, AUTHOR = {Mencaraglia, Denis and Renard, Charles and Cherkashin, Nikolay and Hallais, G. and Jaffr{\'e}, Alexandre and Alvarez, J. and Chau, Guillaume and Vincent, Laetitia and Kleider, Jean-Paul and Hamouda, Fr{\'e}d{\'e}ric and Bouchier, Daniel}, URL = {https://centralesupelec.hal.science/hal-02343896}, BOOKTITLE = {{36th European Photovoltaic Solar Energy Conference and Exhibition}}, ADDRESS = {Marseille, France}, ORGANIZATION = {{WIP}}, SERIES = {Proceedings of the 36th European Photovoltaic Solar Energy Conference}, PAGES = {757}, YEAR = {2019}, MONTH = Sep, DOI = {10.4229/EUPVSEC20192019-3BV.2.49}, KEYWORDS = {Epitaxy ; III-V Semiconductors ; Silicon ; Multijunction Solar Cell}, PDF = {https://centralesupelec.hal.science/hal-02343896/file/3BV.2.49%20Preprint.pdf}, HAL_ID = {hal-02343896}, HAL_VERSION = {v1}, }