Determination of Effective Defects States by Varying the Thickness of Passivating (i)a-Si:H Layer in a-Si :H/c-Si Heterojunction Solar Cell Using Coplanar Conductance - CentraleSupélec
Communication Dans Un Congrès Année : 2019

Determination of Effective Defects States by Varying the Thickness of Passivating (i)a-Si:H Layer in a-Si :H/c-Si Heterojunction Solar Cell Using Coplanar Conductance

Fichier non déposé

Dates et versions

hal-02344024 , version 1 (03-11-2019)

Identifiants

  • HAL Id : hal-02344024 , version 1

Citer

Alexandra Levtchenko, Sylvain Le Gall, Rudolf Brüggemann, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Determination of Effective Defects States by Varying the Thickness of Passivating (i)a-Si:H Layer in a-Si :H/c-Si Heterojunction Solar Cell Using Coplanar Conductance. 28th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 28), Aug 2019, Palaiseau, France. ⟨hal-02344024⟩
62 Consultations
0 Téléchargements

Partager

More