Determination of Effective Defects States by Varying the Thickness of Passivating (i)a-Si:H Layer in a-Si :H/c-Si Heterojunction Solar Cell Using Coplanar Conductance - CentraleSupélec Access content directly
Conference Papers Year : 2019

Determination of Effective Defects States by Varying the Thickness of Passivating (i)a-Si:H Layer in a-Si :H/c-Si Heterojunction Solar Cell Using Coplanar Conductance

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Materials Science [cond-mat.mtrl-sci] Micro and nanotechnologies/Microelectronics Electric power Optics / Photonic Materials

Jean-Paul KLEIDER  : Connect in order to contact the contributor

https://centralesupelec.hal.science/hal-02344024

Submitted on : Sunday, November 3, 2019-7:01:06 PM

Last modification on : Thursday, March 14, 2024-7:17:21 PM

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hal-02344024 , version 1 (03-11-2019)

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  • HAL Id : hal-02344024 , version 1

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Alexandra Levtchenko, Sylvain Le Gall, Rudolf Brüggemann, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider. Determination of Effective Defects States by Varying the Thickness of Passivating (i)a-Si:H Layer in a-Si :H/c-Si Heterojunction Solar Cell Using Coplanar Conductance. 28th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 28), Aug 2019, Palaiseau, France. ⟨hal-02344024⟩

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CNRS CENTRALESUPELEC GEEPS PHEMADIC UNIV-PARIS-SACLAY SORBONNE-UNIVERSITE SU-SCIENCES GEEPS-MATERIAU GS-ENGINEERING GS-PHYSIQUE INSTITUT-SCIENCES-LUMIERE
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