Electrical characterization of PA-MBE grown GaN nanowires via conductive probe AFM - Effect of load and generator resistances - CentraleSupélec
Communication Dans Un Congrès Année : 2021

Electrical characterization of PA-MBE grown GaN nanowires via conductive probe AFM - Effect of load and generator resistances

Fichier non déposé

Dates et versions

hal-03844452 , version 1 (08-11-2022)

Identifiants

  • HAL Id : hal-03844452 , version 1

Citer

Tanbir Sodhi, Pascal Chrétien, Laurent Travers, Frédéric Houzé, Noëlle Gogneau. Electrical characterization of PA-MBE grown GaN nanowires via conductive probe AFM - Effect of load and generator resistances. Summer School of the GDR-PULSE network, Jul 2021, Porquerolles, France. ⟨hal-03844452⟩
30 Consultations
0 Téléchargements

Partager

More