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Article Dans Une Revue Chinese Physics B Année : 2023

Ferroelectricity of pristine Hf 0.5 Zr 0.5 O 2 films fabricated by atomic layer deposition

Résumé

Abstract Hafnium-based ferroelectric films, remaining their ferroelectricity down to nanoscale thickness, present a promising application for low-power logic devices and nonvolatile memories. It has been appealing for researchers to reduce the required temperature to obtain the ferroelectric phase in hafnium-based ferroelectric films for applications such as flexible and wearable electronics. In this work, it demonstrates that a remanent polarization ( P r ) value of >5 μC/cm 2 can be obtained in as-deposited Hf 0.5 Zr 0.5 O 2 (HZO) films that are fabricated by thermal atomic layer deposition (TALD) under low temperature of 250 ℃. The ferroelectric orthorhombic phase (o-phase) in the as-deposited HZO films was detected by scanning transmission electron microscopy (STEM). This low fabrication temperature further extends the compatibility of ferroelectric HZO films to flexible electronics and avoids the cost imposed by following high-temperature annealing treatments.
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Dates et versions

hal-04166867 , version 1 (20-07-2023)

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Luqiu Chen, Xiaoxu Zhang, Guangdi Feng, Yifei Liu, Shenglan Hao, et al.. Ferroelectricity of pristine Hf 0.5 Zr 0.5 O 2 films fabricated by atomic layer deposition. Chinese Physics B, 2023, ⟨10.1088/1674-1056/accff3⟩. ⟨hal-04166867⟩
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