DEVELOPMENT OF MONOLITHICALLY INTEGRATED (Al)GaAs ON SILICON FOR TANDEM SOLAR CELLS
Résumé
We present here an innovative solution to heterogeneously integrated III-V materials on silicon based on the growth of micrometric GaAs crystals on silicon without any structural defects nor stress, using Epitaxal Lateral Overgrowth on Tunnel Oxide from nanoseeds (ELTOn). This epitaxial method has the advantage of being compatible with cost effective processes, while using innovative growth mechanisms with very low III-V material requirement (a micron or so deposited and no III-V or Ge substrate required) helping keep costs competitive and with low use of critical raw materials. The main focus of this work is to address the issue of the doping determination of micrometric size GaAs crystals which is a prerequisite for developing design and technology of multijunction solar cells based on an array of GaAs crystals free of structural defects. In a previous work, local electrical characterizations by µ-PL have revealed a rather high non intentional p-type doping. Several growth solutions (effect of V/III ratio and use of alternative precursor) will be presented to lower these high non intentional p-type doping.
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