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Contactless Investigation of the p-Type Doping Concentration Level of Single Micrometric Size GaAs Crystals Grown on Silicon for Multijunction Solar Cells35th European Photovoltaic Solar Energy Conference and Exhibition (EU-PVSEC), EU PVSEC, Sep 2018, Bruxelles, Belgium. pp.660 - 664, ⟨10.4229/35thEUPVSEC20182018-2AV.3.17⟩
Conference papers
hal-01936835v1
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Contactless conductivity measurement for ITO nanolayers on AsGa substrats over a wide frequency rangeIEEE SENSORS 2018, Oct 2018, New delhi, India. ⟨10.1109/icsens.2018.8589554⟩
Conference papers
hal-01943876v1
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Analyse par photoluminescence du dopage résiduel dans un cristal unique de GaAs de taille micrométrique épitaxié sur silicium pour la réalisation de multijonctionsJournées Nationales du Photovoltaïque 2018 (JNPV 2018), Dec 2018, Dourdan, France
Conference poster
hal-01942352v1
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