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Admittance spectroscopy of InGaNAs layers in solar cellsSaint-Petersburg OPEN 2017, 4th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Apr 2017, Saint-Petersburg, Russia
Conference poster
hal-01632946v1
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Study of GaP nucleation layer grown on Si by PE-ALDE-MRS 2019 Spring Meeting, May 2019, Marseille, France
Conference papers
hal-02344049v1
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Influence of PE-ALD of GaP on the Silicon Wafers Qualityphysica status solidi (a), 2017, ⟨10.1002/pssa.201700685⟩
Journal articles
hal-01629362v1
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Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALDphysica status solidi (a), 2019, 216 (10), pp.1800617. ⟨10.1002/pssa.201800617⟩
Journal articles
hal-01943257v1
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Characterization of GaP/Si heterojunctions by space charge capacitance measurementsE-MRS 2017 Spring Meeting, May 2017, Strasbourg, France
Conference papers
hal-01632942v1
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