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Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVDMaterials, 2019, 12 (22), pp.3795. ⟨10.3390/ma12223795⟩
Journal articles
hal-02392513v1
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Low Temperature p-n Junction Fabrication by PECVD for n-PERT Solar Cells: An Alternative to Boron Diffusion36th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2019), Sep 2019, Marseille, France
Conference poster
hal-02344037v1
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