STATE OF THE ART OF DV/DT AND DI/DT CONTROL OF INSULATED GATE POWER SWITCHES - CentraleSupélec Access content directly
Conference Papers Year : 2007

STATE OF THE ART OF DV/DT AND DI/DT CONTROL OF INSULATED GATE POWER SWITCHES

Dominique Bergogne
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Abstract

IGBT and MOSFET power switches are commonly used in power converters. MOSFET for middle power and IGBT for high power converters : gate drive circuits are used to drive such components. Some applications need to control dv/dt and di/dt from power switches to reduce electromagnetic emissions. New solutions have been introduced and tested since 1990 (conresponding to the maturation of IGBT technology). This article is about a state of the art of di/dt and dv/dt methods. The authors propose original solutions with simulations and experimental results on 1200A-3300V IGBT modules.

Domains

Electric power
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Dates and versions

hal-00214211 , version 1 (23-01-2008)

Identifiers

  • HAL Id : hal-00214211 , version 1

Cite

Pierre Lefranc, Dominique Bergogne. STATE OF THE ART OF DV/DT AND DI/DT CONTROL OF INSULATED GATE POWER SWITCHES. Proceedings of the Conference Captech IAP1, Power Supply and Energy Management for Defence Applications, Jun 2007, Bruxelles, Belgium. pp.1-8. ⟨hal-00214211⟩
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