Fast photorefractive self-focusing in InP:Fe semiconductor at infrared wavelengths - CentraleSupélec
Article Dans Une Revue Applied Physics Letters Année : 2008

Fast photorefractive self-focusing in InP:Fe semiconductor at infrared wavelengths

Résumé

Photorefractive beam self-trapping is investigated in InP:Fe and is shown to occur within tens of microseconds after beam switch on. This fast response time is predicted by an analytical theoretical interpretation based on a simple photorefraction model which suggests buildups in a time range consistent with experiments.
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Dates et versions

hal-00216680 , version 1 (25-01-2008)

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Delphine Wolfersberger, Naima Khelfaoui, Cristian Dan, Nicolas Fressengeas, Hervé Leblond. Fast photorefractive self-focusing in InP:Fe semiconductor at infrared wavelengths. Applied Physics Letters, 2008, 92 (2), pp.021106-1-3. ⟨10.1063/1.2830989⟩. ⟨hal-00216680⟩
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