Article Dans Une Revue Journal of Non-Crystalline Solids Année : 2004

Effects of proton irradiation on the photoelectronic properties of microcrystalline silicon

Résumé

We report on proton irradiation of microcrystalline silicon with 2 MeV protons and find a drop in the mobility–lifetime product related to an increase in the density of gap states as revealed by modulated photocurrent experiments. The dark conductivity also drops due to a shift in the Fermi energy by defect creation and re-balance of charge. The impact on the ambipolar diffusion length, representing the minority-carrier properties, is much smaller. The electronic properties of P and B doped samples are hardly affected. We discuss the implications for microcrystalline silicon pin solar cells.

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hal-00321028 , version 1 (17-06-2025)

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Rudi Brüggemann, Stephan Brehme, Jean-Paul Kleider, Marie-Estelle Gueunier, Wolfgang Bronner. Effects of proton irradiation on the photoelectronic properties of microcrystalline silicon. Journal of Non-Crystalline Solids, 2004, 338-340, pp.477-480. ⟨10.1016/j.jnoncrysol.2004.03.023⟩. ⟨hal-00321028⟩
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