Deep defects and their electron capture cross sections in polymorphous silicon-germanium thin films - CentraleSupélec Access content directly
Journal Articles Journal of Applied Physics Year : 2005

Deep defects and their electron capture cross sections in polymorphous silicon-germanium thin films

M. Meaudre
  • Function : Author
R. Meaudre
  • Function : Author
S. Vignoli
B. Canut
  • Function : Author
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Dates and versions

hal-00321252 , version 1 (12-09-2008)

Identifiers

  • HAL Id : hal-00321252 , version 1

Cite

M. Meaudre, Marie-Estelle Gueunier-Farret, R. Meaudre, Jean-Paul Kleider, S. Vignoli, et al.. Deep defects and their electron capture cross sections in polymorphous silicon-germanium thin films. Journal of Applied Physics, 2005, 98, pp.33531. ⟨hal-00321252⟩
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