Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates - CentraleSupélec Access content directly
Conference Papers Year : 2007

Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates

A. Ougazzaden
D.J. Rogers
  • Function : Author
F. Hosseini Teherani
  • Function : Author
T. Moudakir
  • Function : Author
S. Gautier
  • Function : Author
T. Aggerstam
  • Function : Author
S. Ould Saad
J. Martin
  • Function : Author
O. Durand
  • Function : Author
G. Garry
  • Function : Author
A. Lusson
  • Function : Author
D. Mcgrouther
  • Function : Author
J.N. Chapman
  • Function : Author
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Dates and versions

hal-00322269 , version 1 (17-09-2008)

Identifiers

  • HAL Id : hal-00322269 , version 1

Cite

A. Ougazzaden, D.J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, et al.. Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates. E-MRS 2007 Spring Meeting, 2007, France. ⟨hal-00322269⟩
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