Device grade hydrogenated polymorphous silicon deposited at high rates - CentraleSupélec Access content directly
Journal Articles Journal of Non-Crystalline Solids Year : 2008

Device grade hydrogenated polymorphous silicon deposited at high rates

A. Abramov
  • Function : Author
E.V. Johnson
Pere Roca I Cabarrocas
No file

Dates and versions

hal-00350767 , version 1 (07-01-2009)

Identifiers

  • HAL Id : hal-00350767 , version 1

Cite

Yrebegnan Moussa Soro, A. Abramov, Marie-Estelle Gueunier-Farret, E.V. Johnson, Christophe Longeaud, et al.. Device grade hydrogenated polymorphous silicon deposited at high rates. Journal of Non-Crystalline Solids, 2008, 354, pp.2092. ⟨hal-00350767⟩
67 View
0 Download

Share

Gmail Facebook X LinkedIn More