Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates - CentraleSupélec Access content directly
Journal Articles Journal of Crystal Growth Year : 2008

Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates

A. Ougazzaden
D. J. Rogers
  • Function : Author
F. Hosseini Teherani
  • Function : Author
T. Moudakir
  • Function : Author
S. Gautier
  • Function : Author
T. Aggerstam
  • Function : Author
S. Ould Saad
J. Martin
  • Function : Author
O. Durand
  • Function : Author
G. Garry
  • Function : Author
A. Lusson
  • Function : Author
D. Mcgrouther
  • Function : Author
J.N. Chapman
  • Function : Author
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Dates and versions

hal-00350864 , version 1 (07-01-2009)

Identifiers

  • HAL Id : hal-00350864 , version 1

Cite

A. Ougazzaden, D. J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, et al.. Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates. Journal of Crystal Growth, 2008, pp.944. ⟨hal-00350864⟩
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