Article Dans Une Revue Physica Status Solidi C: Current Topics in Solid State Physics Année : 2010

B-Doped a-Si:H contact improvement on silicon heterojunctions solar cells and interdigitated back contact structure

Résumé

Abstract This study reports on the p‐type a‐Si:H emitter layer of silicon heterojunction (Si‐HJ) solar cells and its contacting scheme. The influence of the ratio between p‐type a‐Si:H emitter width and its contact width is checked on Interdigitated Back Contact (IBC) Si‐HJ both experimentally and by 2D modelling. A low emitter contact fraction value is found to be detrimental to the IBC Si‐HJ cells efficiency due to distributed series resistance effects. This not only limits the cell fill factor (FF) but also its short circuit current density (Jsc). By increasing the emitter contact fraction an efficiency of 12.7% is obtained on 25 cm 2 IBC Si‐HJ solar cells. New B‐doped a‐Si:H emitter layers and contacts are also developed on inverted Si‐HJ cells. Depending on the a‐Si:H conductivity, we observe a great impact of the contact material on Si‐HJ cells performance.

Dates et versions

hal-00555227 , version 1 (12-01-2011)

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Tristan Desrues, Pierre-Jean Ribeyron, Aurélie Vandeneynde, Anne-Sophie Ozanne, Florent Souche, et al.. B-Doped a-Si:H contact improvement on silicon heterojunctions solar cells and interdigitated back contact structure. Physica Status Solidi C: Current Topics in Solid State Physics, 2010, 7 (3), pp.1011-1015. ⟨10.1002/pssc.200982766⟩. ⟨hal-00555227⟩
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