Discerning passivation mechanisms at a-Si:H/c-Si interfaces by means of photoconductance measurements - CentraleSupélec Access content directly
Journal Articles Applied Physics Letters Year : 2011

Discerning passivation mechanisms at a-Si:H/c-Si interfaces by means of photoconductance measurements

Caspar Leendertz
  • Function : Author
N. Mingirulli
  • Function : Author
T.F. Schulze
  • Function : Author
Bernd Rech
  • Function : Author
Lars Korte
  • Function : Author

Abstract

The photoconductance decay (PCD) measurement is a fast and simple method to characterize amorphous/crystalline (a-Si:H/c-Si) silicon interfaces for high-efficiency solar cells. However, PCD only yields information concerning the overall recombination rate in the structure. To overcome this limitation, we have developed and validated a computer-aided PCD (CA-PCD) analysis method to determine the defect density of recombination-active dangling bonds at the interface and the potential drop in the crystalline absorber adjacent to the interface. As a practical example, we investigate a-Si:H(p)/a-Si:H(i)/c-Si(n) layer stacks and show that the CA-PCD method is capable of discerning the influence of field-effect and defect passivation.
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Dates and versions

hal-00710735 , version 1 (21-06-2012)

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Cite

Caspar Leendertz, N. Mingirulli, T.F. Schulze, Jean-Paul Kleider, Bernd Rech, et al.. Discerning passivation mechanisms at a-Si:H/c-Si interfaces by means of photoconductance measurements. Applied Physics Letters, 2011, 98 (20), pp.202108 - 202108-3. ⟨10.1063/1.3590254⟩. ⟨hal-00710735⟩
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