Growth and transport properties of HT-LixCoO2 thin films deposited by pulsed laser deposition - CentraleSupélec Access content directly
Journal Articles Applied Surface Science Year : 2012

Growth and transport properties of HT-LixCoO2 thin films deposited by pulsed laser deposition

Efthymios Svoukis
  • Function : Author
G.I. Athanasopoulos
  • Function : Author
Alec Moradpour
  • Function : Author
Alexandre Revcolevschi
  • Function : Author
John Giapintzakis
  • Function : Author

Abstract

The successful in situ growth of single phase, c-axis oriented, layered structured LixCoO2 thin films on (0 0 0 1) Al2O3 substrates by pulsed laser deposition is reported. Thin films were grown in an oxygen pressure of 1 mbar and substrate temperatures varying from 300 up to 600 °C. It is found that the surface roughness and electrical resistance of the films depends strongly on the deposition temperatures.

Dates and versions

hal-00777867 , version 1 (18-01-2013)

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Efthymios Svoukis, G.I. Athanasopoulos, Alec Moradpour, Olivier Schneegans, Alexandre Revcolevschi, et al.. Growth and transport properties of HT-LixCoO2 thin films deposited by pulsed laser deposition. Applied Surface Science, 2012, 258 (23), pp.9366-9369. ⟨10.1016/j.apsusc.2012.02.086⟩. ⟨hal-00777867⟩
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