Interface properties of amorphous-crystalline silicon heterojunctions prepared using DC saddle-field PECVD - CentraleSupélec Access content directly
Journal Articles Journal of Non-Crystalline Solids Year : 2012

Interface properties of amorphous-crystalline silicon heterojunctions prepared using DC saddle-field PECVD

Abstract

The planar conductance technique has been previously used in the study of amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunctions, grown using conventional Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF-PECVD), to examine the existence of a strong inversion layer at the c-Si surface. In the present study such measurements were undertaken on a series of heterojunctions in order to provide insight into the nature of the electrical interface between the hydrogenated amorphous silicon, deposited using the DC Saddle Field PECVD system, and the underlying crystalline silicon wafer. The films showed good passivation and a strong inversion layer, indicating their amenability for device applications.
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Dates and versions

hal-00778948 , version 1 (21-01-2013)

Identifiers

  • HAL Id : hal-00778948 , version 1

Cite

Basia Halliop, Marie-France Salaün, Wilfried Favre, Renaud Varache, Marie-Estelle Gueunier-Farret, et al.. Interface properties of amorphous-crystalline silicon heterojunctions prepared using DC saddle-field PECVD. Journal of Non-Crystalline Solids, 2012, 358 (17), pp.2227-2231. ⟨hal-00778948⟩
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