Determination of free-carrier and phonon-assisted absorptions for Si-doped GaSb thin layers - CentraleSupélec Access content directly
Journal Articles Applied physics. A, Materials science & processing Year : 2013

Determination of free-carrier and phonon-assisted absorptions for Si-doped GaSb thin layers

Faycel Saadallah
  • Function : Author
Sameh Abroug
  • Function : Author
Nourreddine Yacoubi
  • Function : Author

Abstract

Photothermal deflection spectroscopy is used in order to investigate near- and sub-band gap absorption of Si-doped GaSb epilayers deposited by MBE on a semi-insulating GaAs substrate. The optical absorption spectra show an extra absorption on the transparency region below the bandgap due to free-carrier absorption. However, for energies above the gap, we notice a linear behavior of the square root of the absorption coefficient versus the heating beam energy, which is attributed to phonon-assisted absorption. From interpolation of the phonon absorption to low energies we have determined the free-carrier absorption that is found to follow the Drude law.

Dates and versions

hal-00924740 , version 1 (07-01-2014)

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Faycel Saadallah, Sameh Abroug, Frédéric Genty, Nourreddine Yacoubi. Determination of free-carrier and phonon-assisted absorptions for Si-doped GaSb thin layers. Applied physics. A, Materials science & processing, 2013, 113 (3), pp.729-733. ⟨10.1007/s00339-013-7571-0⟩. ⟨hal-00924740⟩
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