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Journal Articles Materials Science and Engineering: B Year : 2013

Silicon heterojunction solar cells: optimization of emitter and contact properties from analytical calculation and numerical simulation

Abstract

The key constituent of silicon heterojunction solar cells, the amorphous silicon/crystalline silicon heterojunction (a-Si:H/c-Si), offers a high open-circuit voltage (Voc) potential providing that both the interface defect passivation and the band bending in the c-Si absorber are sufficient. We detail here analytical calculations of the equilibrium band bending in c-Si (ψc-Si) in Transparent Conductive Oxide (TCO)/a-Si:H emitter/c-Si absorber structures. We studied the variation of some electronic parameters (density of states, work function) according to relevant experimental values. This study introduces a discussion on the optimization of the doped emitter layer in relation with the work function of the TCO. In particular, we argue on the advantage of having a highly defective (p)a-Si:H emitter layer that maximizes ψc-Si and reduces the influence of the TCO on Voc.

Dates and versions

hal-00931269 , version 1 (15-01-2014)

Identifiers

Cite

Renaud Varache, Jean-Paul Kleider, Marie-Estelle Gueunier-Farret, Lars Korte. Silicon heterojunction solar cells: optimization of emitter and contact properties from analytical calculation and numerical simulation. Materials Science and Engineering: B, 2013, 178 (9), pp.593-598. ⟨10.1016/j.mseb.2012.11.011⟩. ⟨hal-00931269⟩
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