Role of Anions in the AuCl3-Doping Trilayers N-doped Graphene on 4H-SiC (0001) - CentraleSupélec Access content directly
Conference Poster Year : 2014
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hal-01104496 , version 1 (16-01-2015)

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  • HAL Id : hal-01104496 , version 1

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Hakim Arezki, Mohamed Boutchich, David Alamarguy, Fethullah Gunes, José Alvarez, et al.. Role of Anions in the AuCl3-Doping Trilayers N-doped Graphene on 4H-SiC (0001). IRAGO 2014, Nov 2014, Tsukuba, Japan. pp.7P8. ⟨hal-01104496⟩
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