AlGaN-based multi-quantum wells emitting at 285 nm grown on a thick AlGaN relaxed buffer on AlN template - CentraleSupélec Access content directly
Conference Papers Year : 2014

AlGaN-based multi-quantum wells emitting at 285 nm grown on a thick AlGaN relaxed buffer on AlN template

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hal-01108899 , version 1 (23-01-2015)

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  • HAL Id : hal-01108899 , version 1

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Xin Li, Suresh Sundaram, Youssef El Gmili, Tarik Moudakir, Pierre Disseix, et al.. AlGaN-based multi-quantum wells emitting at 285 nm grown on a thick AlGaN relaxed buffer on AlN template. 17th International Conference on MetalOrganic Vapour Phase Epitaxy, Jul 2014, Lausanne, Switzerland. pp.Mon-Poster-0-28. ⟨hal-01108899⟩
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