Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells - CentraleSupélec Access content directly
Conference Poster Year : 2016

Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells

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hal-01395733 , version 1 (11-11-2016)

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  • HAL Id : hal-01395733 , version 1

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Alexander Korovin, J Alvarez, Jean-Paul Kleider. Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells. SiliconPV 2016, Mar 2016, Chambéry, France. ⟨hal-01395733⟩
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