Direct Growth of Crystalline Silicon on GaAs by Low Temperature PECVD: Towards Hybrid Tunnel Junctions for III-V/Si Tandem Cells - CentraleSupélec Access content directly
Conference Papers Year : 2017

Direct Growth of Crystalline Silicon on GaAs by Low Temperature PECVD: Towards Hybrid Tunnel Junctions for III-V/Si Tandem Cells

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hal-01632921 , version 1 (10-11-2017)

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  • HAL Id : hal-01632921 , version 1

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Gwenaëlle Hamon, Nicolas Vaissiere Vaissière, Jean Decobert, Raphaël Lachaume, Romain Cariou, et al.. Direct Growth of Crystalline Silicon on GaAs by Low Temperature PECVD: Towards Hybrid Tunnel Junctions for III-V/Si Tandem Cells. 13th International Conference on Concentrator Photovoltaic Systems (CPV 13), May 2017, Ottawa, Canada. ⟨hal-01632921⟩
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