Electrical characterization of low temperature plasma epitaxial Si grown on highly doped Si substrates - CentraleSupélec Access content directly
Conference Papers Year : 2019
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hal-02344032 , version 1 (03-11-2019)

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  • HAL Id : hal-02344032 , version 1

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Cyril Léon, Sylvain Le Gall, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Pere Roca I Cabarrocas Roca I Cabarrocas. Electrical characterization of low temperature plasma epitaxial Si grown on highly doped Si substrates. 28th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 28), Aug 2019, Palaiseau, France. ⟨hal-02344032⟩
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