During the last years, we developed both an efficient High-Frequency Modulated Photoluminescence (MPL) setup, covering a frequency range of 10Hz-200MHz [1] and a corresponding analytical theory [2] allowing to explain the appearance of V-shaped phase patterns in the MPL bode diagrams of probed semiconductors layers by the presence of Shockley Read Hall (SRH) recombination. An example of V-shape in phase behavior can be seen in the bode diagram on figure 1a. We precedingly investigated a fitting strategy based on curves obtained at several illumination levels. However, experiments at several temperatures are also a promising way to explore recombination paths. This year, we performed theoretical calculations and analytical simulations in order to show that the variations of the V-shape corner frequencies w1, w2, w3 with respect to the temperature allow for recovering some trap parameters such as the energy position in the bandgap (activation energy) and the minority carrier capture cross section (see Figures 1b and 1c). The validity domain of this theory will be discussed for low and high injection as well as doped and intrinsic materials. We also extended the previous theory [2] by finding supplementary rules for the appearance and disappearance of V-shapes. We proofed that the MPL amplitude curve also contains information about the injection level during the experiment. Finally, we are currently performing MPL versus temperature experiments in order to validate our theory. We will present all these results during the conference. [1]W. Zhao et al., « Coupled time resolved and high frequency modulated photoluminescence probing surface passivation of highly doped n-type InP samples », J. Appl. Phys., vol. 129, no 21, p. 215305, juin 2021, doi: 10.1063/5.0033122. [2]N. Moron, B. Bérenguier, J. Alvarez, et J.-P. Kleider, « Analytical model of the modulated photoluminescence in semiconductor materials », J. Phys. Appl. Phys., vol. 55, no 10, p. 105103, mars 2022, doi: 10.1088/1361-6463/ac39c4.