Activation of B1 silent Raman modes and its potential origin as source for phonon-assisted replicas in photoluminescence response in N-doped ZnO nanowires - CentraleSupélec Accéder directement au contenu
Article Dans Une Revue Journal of Applied Physics Année : 2018

Activation of B1 silent Raman modes and its potential origin as source for phonon-assisted replicas in photoluminescence response in N-doped ZnO nanowires

Résumé

ZnO nanowires are grown by metal organic chemical vapor deposition using two different zinc precursors, i.e., dimethylzinc-triethylamine which contains nitrogen, and diethylzinc which does not. The growth conditions are varied using different oxygen/zinc pressure ratios (RO/Zn). Temperature dependent Raman spectroscopy shows that the additional Raman modes are related to B1 modes which are activated because of translational symmetry breaking resulting from the nitrogen substitution on oxygen sites and/or Zn-O bond breaking caused by complex defects. Simultaneously, the antiparallel atomic displacements which are at the origin of B1 phonon vibrations are no more compensated, allowing B1 modes to acquire a polar character. The resulting polar phonons, and especially B12 located at 580 cm−1 (i.e., 72 meV), are therefore believed to strongly couple to photogenerated electrons through a Fröhlich mechanism and could lead or contribute to the phonon-assisted replicas observed in the photoluminescence (PL) spectrum. Finally, we also discuss the possible defects involved in the Raman and PL responses including native donor and acceptor defects and their interaction with the N-dopant, depending on the growth conditions.
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Dates et versions

hal-04472558 , version 1 (22-02-2024)

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H. Souissi, S. Jabri, A. Souissi, G. Amiri, P. Gemeiner, et al.. Activation of B1 silent Raman modes and its potential origin as source for phonon-assisted replicas in photoluminescence response in N-doped ZnO nanowires. Journal of Applied Physics, 2018, 123 (2), ⟨10.1063/1.5011142⟩. ⟨hal-04472558⟩
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