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Conference Papers Year : 2007

Device grade hydrogenated polymorphous silicon deposited at high rates

A. Abramov
  • Function : Author
E.V. Johnson
Pere Roca I Cabarrocas
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Dates and versions

hal-00322281 , version 1 (17-09-2008)

Identifiers

  • HAL Id : hal-00322281 , version 1

Cite

Yrebegnan Moussa Soro, A. Abramov, Marie-Estelle Gueunier-Farret, E.V. Johnson, Christophe Longeaud, et al.. Device grade hydrogenated polymorphous silicon deposited at high rates. 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS 22, 2007, United States. ⟨hal-00322281⟩
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