Characterization of defects in semi-insulating SiC by means of Photoinduced current transient spectroscopy and modulated photocurrent technique - CentraleSupélec Access content directly
Conference Papers Year : 2008

Characterization of defects in semi-insulating SiC by means of Photoinduced current transient spectroscopy and modulated photocurrent technique

P. Kaminski
  • Function : Author
R. Kozlowski
  • Function : Author
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hal-00351230 , version 1 (08-01-2009)

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  • HAL Id : hal-00351230 , version 1

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Christophe Longeaud, Jean-Paul Kleider, P. Kaminski, R. Kozlowski. Characterization of defects in semi-insulating SiC by means of Photoinduced current transient spectroscopy and modulated photocurrent technique. XI International Conference “Physics of dielectrics”, Jun 2008, St Petersbourg, Russia. pp.CD-ROM Proceedings. ⟨hal-00351230⟩
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