Physical insight into interface passivation of a-Si:H/c-Si heterostructures by analysis of injection-dependent lifetime and band bending - CentraleSupélec Access content directly
Conference Papers Year : 2010

Physical insight into interface passivation of a-Si:H/c-Si heterostructures by analysis of injection-dependent lifetime and band bending

Caspar Leendertz
  • Function : Author
N. Mingirulli
  • Function : Author
T.F. Schulze
  • Function : Author
Bernd Rech
  • Function : Author
Lars Korte
  • Function : Author
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Dates and versions

hal-00555253 , version 1 (12-01-2011)

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  • HAL Id : hal-00555253 , version 1

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Caspar Leendertz, N. Mingirulli, T.F. Schulze, Jean-Paul Kleider, Bernd Rech, et al.. Physical insight into interface passivation of a-Si:H/c-Si heterostructures by analysis of injection-dependent lifetime and band bending. 25th European Photovoltaic Solar Energy Conference, Sep 2010, Valencia, Spain. ⟨hal-00555253⟩
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