Silicon doping of GaP layers grown by time-modulated PECVD - CentraleSupélec Access content directly
Conference Poster Year : 2018
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hal-01801312 , version 1 (28-05-2018)

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  • HAL Id : hal-01801312 , version 1

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Artem Baranov, I.A. Morozov, A.V. Uvarov, G. E. Yakovlev, Jean-Paul Kleider. Silicon doping of GaP layers grown by time-modulated PECVD. Saint-Petersburg OPEN 2018, 5th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Apr 2018, Saint-Pétersbourg, Russia. ⟨hal-01801312⟩
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